Record Type
Journal Articles

Contributor Information

Author(s)
Niu G, Yang H, Varadharajaperumal M, Shi Y, Cressler J, Krithivasan R, Marshall P, Reed R

Title Information

Full Title
Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs
Publication Title (abbreviated)
IEEE T NUCL SCI

Identifiers

DOI
10.1109/TNS.2005.860744
ISSN
0018-9499

Publication Information

Publication Date
2005 Dec
Volume
52
Issue
6
First Page
2153
Last Page
2157
Page Count
5
Citation
Niu G, Yang H, Varadharajaperumal M, Shi Y, Cressler J, Krithivasan R, Marshall P, Reed R. Simulation of a new back junction approach for reducing charge collection in 200 GHz SiGeHBTs. IEEE T NUCL SCI. 2005;52 (6):2153-2157.

Copyright