Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K

Record Type
Journal Articles
Full Title
Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K
Author(s)
Marshall C, Marshall P, Ladbury R, Waczynski A, Arora R, Foltz R, Cressler J, Kahle D, Chen D, Delo G, Dodds N, Pellish J, Kan E, Boehm N, Reed R, LaBel K
Publication Title
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
Publication Title (abbreviated)
IEEE TRANS NUCL SCI
Publication Date
2010 Dec
DOI
10.1109/TNS.2010.2085018
ISSN
0018-9499
Volume
57
Issue
6
Page Count
9
First Page
3078
Last Page
3086
Keyword(s)
Engineering, Electrical & Electronic, Nuclear Science & Technology, Cryogenic latchup, low temperature electronics, readout integrated circuit, single event effects, single event latchup, SILICON BIPOLAR-TRANSISTORS, BULK CMOS, DEVICES, BASE, GAIN
Citation
Marshall C, Marshall P, Ladbury R, Waczynski A, Arora R, Foltz R, Cressler J, Kahle D, Chen D, Delo G, et al. Mechanisms and Temperature Dependence of Single Event Latchup Observed in a CMOS Readout Integrated Circuit From 16-300 K. IEEE TRANS NUCL SCI. 2010;57 (6):3078-3086.
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