Hot-electron effects in strongly localized doped silicon at low temperature

Record Type

  • Journal Articles

Full Title

  • Hot-electron effects in strongly localized doped silicon at low temperature

Author(s)

  • Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, Gygax J, Kelley R, Kilbourne C, Porter F, Stahle C, Szymkowiak A

Publication Title

Publication Title (abbreviated)

  • PHYS REV B

Publication Date

  • 2007 Oct

DOI

  • 10.1103/PhysRevB.76.155207

ISSN

  • 1098-0121

Volume

  • 76

Issue

  • 15

Page Count

  • 6

Article Number

  • 155207

Keyword(s)

Citation

  • Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, et al. Hot-electron effects in strongly localized doped silicon at low temperature. PHYS REV B. 2007;76 (15):6.

Conditions of Use

  • Author can archive pre-print (i.e., pre-refereeing)
  • Author can archive post-print (i.e., final draft post-refereeing)
  • Link to publisher version required
  • Publisher copyright and source must be acknowledged with citation
  • Author's Post-print on author's personal website, employers website, institutional repository or e-print server
  • Publisher's version/PDF can be used on author's personal website, employers website or institutional repository
  • Publisher's version/PDF cannot be used on "e-print servers" or shared repositories
  • Publisher last contacted on 29/02/2012

More usage information may be available at SHERPA/RoMEO