Hot-electron effects in strongly localized doped silicon at low temperature

Record Type

  • Journal Articles

Full Title

  • Hot-electron effects in strongly localized doped silicon at low temperature

Author(s)

  • Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, Gygax J, Kelley R, Kilbourne C, Porter F, Stahle C, Szymkowiak A

Publication Title

Publication Title (abbreviated)

  • PHYS REV B

Publication Date

  • 2007 Oct

DOI

  • 10.1103/PhysRevB.76.155207

ISSN

  • 1098-0121

Volume

  • 76

Issue

  • 15

Page Count

  • 6

Article Number

  • 155207

Keyword(s)

Citation

  • Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, et al. Hot-electron effects in strongly localized doped silicon at low temperature. PHYS REV B. 2007;76 (15):6.

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  • Publisher last contacted on 29/02/2012
  • Publisher last reviewed on 27/10/2014

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