Hot-electron effects in strongly localized doped silicon at low temperature

Record Type
Journal Articles
Full Title
Hot-electron effects in strongly localized doped silicon at low temperature
Author(s)
Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, Gygax J, Kelley R, Kilbourne C, Porter F, Stahle C, Szymkowiak A
Publication Title
PHYSICAL REVIEW B
Publication Title (abbreviated)
PHYS REV B
Publication Date
2007 Oct
DOI
10.1103/PhysRevB.76.155207
ISSN
1098-0121
Volume
76
Issue
15
Page Count
6
Article Number
155207
Keyword(s)
Physics, Condensed Matter, METAL-INSULATOR-TRANSITION, HOPPING CONDUCTION, SEMICONDUCTOR THERMISTORS, BOLOMETER, MICROCALORIMETER, SENSITIVITY
Citation
Galeazzi M, Liu D, McCammon D, Rocks L, Sanders W, Smith B, Tan P, Vaillancourt J, Boyce K, Brekosky R, et al. Hot-electron effects in strongly localized doped silicon at low temperature. PHYS REV B. 2007;76 (15):6.
Conditions of Use
  • Author can archive pre-print (i.e., pre-refereeing)
  • Author can archive post-print (i.e., final draft post-refereeing)
  • On author's personal website, employer's website or institutional repository
  • Publisher's version/PDF may be used
  • Publisher's version/PDF may be used on author's personal website or employer's website only
  • Link to publisher version required
  • Publisher copyright and source must be acknowledged with citation
  • Publisher last contacted on 29/02/2012
  • Publisher last reviewed on 25/09/2015

More usage information may be available at SHERPA/RoMEO