LaBel, Kenneth A.

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  1. Berg M, Friendlich M, Kim H, Seidlick C, LaBel K, Ladbury R, Pellish J. CHARACTERIZING THE EFFECTS OF SINGLE EVENT UPSETS ON SYNCHRONOUS DATA PATHS. Nuclear Science, IEEE Transactions on. 2013;PP (99):
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  2. Boutte A, Cochran D, Chen D, Campola M, Pellish J, Ladbury R, Wilcox E, Lauenstein J, Gigliuto R, LaBel K, O'Bryan M. COMPENDIUM OF RECENT TOTAL IONIZING DOSE AND DISPLACEMENT DAMAGE FOR CANDIDATE SPACECRAFT ELECTRONICS FOR NASA. In: Radiation Effects Data Workshop (REDW), 2013 IEEE. Radiation Effects Data Workshop (REDW), 2013 IEEE; 2013; 2013. p. 1-9.
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  3. LaBel K, Gigliuto R, Szabo C, Carts M, Kay M, Sinclair T, Gadlage M, Duncan A, Ingalls D. HARDNESS ASSURANCE FOR TOTAL DOSE AND DOSE RATE TESTING OF A STATE-OF-THE-ART OFF-SHORE 32 NM CMOS PROCESSOR. In: Radiation Effects Data Workshop (REDW), 2013 IEEE. Radiation Effects Data Workshop (REDW), 2013 IEEE; 2013; 2013. p. 1-6.
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  4. Berg M, Kim H, Phan A, Seidleck C, LaBel K, Pellish J. SINGLE EVENT INDUCED MULTIPLE BIT ERRORS AND THE EFFECTS OF LOGIC MASKING. IEEE Trans. Nucl. Sci. 2013;60 (6):4192-4199.
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  5. Ladbury R, Berg M, Wilcox E, LaBel K, Kim H, Phan A, Seidleck C. USE OF COMMERCIAL FPGA-BASED EVALUATION BOARDS FOR SINGLE-EVENT TESTING OF DDR2 AND DDR3 SDRAMS. Nuclear Science, IEEE Transactions on. 2013;PP (99):
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  6. Label K. CONFERENCE COMMENTS BY THE GENERAL CHAIR. IEEE Trans. Nucl. Sci. 2012;59 (6):2629-2631.
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  7. Oldham T, Friendlich M, Wilcox E, LaBel K, Buchner S, McMorrow D, Mavis D, Eaton P, Castillo J. CORRELATION OF LASER TEST RESULTS WITH HEAVY ION RESULTS FOR NAND FLASH MEMORY. IEEE Trans. Nucl. Sci. 2012;59 (6):2831-2836.
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  8. Schwank J, Shaneyfelt M, Ferlet-Cavrois V, Dodd P, Blackmore E, Pellish J, Rodbell K, Heidel D, Marshall P, LaBel K, Gouker P, Tam N, Wong R, Wen S, Reed R, Dalton S, Swanson S. HARDNESS ASSURANCE TESTING FOR PROTON DIRECT IONIZATION EFFECTS. IEEE Trans. Nucl. Sci. 2012;59 (4):1197-1202.
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  9. Rezgui S, Wilcox E, Lee P, Carts M, Label K, Victor N, Telecco N, McCollum J. INVESTIGATION OF LOW DOSE RATE AND BIAS CONDITIONS ON THE TOTAL DOSE TOLERANCE OF A CMOS FLASH-BASED FPGA. IEEE Trans. Nucl. Sci. 2012;59 (1):134-143.
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  10. Oldham T, Chen D, Friendlich M, LaBel K. RETENTION CHARACTERISTICS OF COMMERCIAL NAND FLASH MEMORY AFTER RADIATION EXPOSURE. IEEE Trans. Nucl. Sci. 2012;59 (6):3011-3015.
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  11. Rodbell K, Heidel D, Pellish J, Marshall P, Tang H, Murray C, LaBel K, Gordon M, Stawiasz K, Schwank J, Berg M, Kim H, Friendlich M, Phan A, Seidleck C. 32 AND 45 NM RADIATION-HARDENED-BY-DESIGN (RHBD) SOI LATCHES. IEEE Trans. Nucl. Sci. 2011;58 (6):2702-2710.
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  12. Schwank J, Shaneyfelt M, Dodd P, McMorrow D, Warner J, Ferlet-Cavrois V, Gouker P, Melinger J, Pellish J, Rodbell K, Heidel D, Marshall P, LaBel K, Swanson S. COMPARISON OF SINGLE AND TWO-PHOTON ABSORPTION FOR LASER CHARACTERIZATION OF SINGLE-EVENT UPSETS IN SOI SRAMS. IEEE Trans. Nucl. Sci. 2011;58 (6):2968-2975.
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  13. Oldham T, Chen D, Friendlich M, Carts M, Seidleck C, LaBel K. EFFECT OF RADIATION EXPOSURE ON THE RETENTION OF COMMERCIAL NAND FLASH MEMORY. IEEE Trans. Nucl. Sci. 2011;58 (6):2904-2910.
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  14. Lauenstein J, Goldsman N, Liu S, Titus J, Ladbury R, Kim H, Phan A, LaBel K, Zafrani M, Sherman P. EFFECTS OF ION ATOMIC NUMBER ON SINGLE-EVENT GATE RUPTURE (SEGR) SUSCEPTIBILITY OF POWER MOSFETS. IEEE Trans. Nucl. Sci. 2011;58 (6):2628-2636.
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  15. Liu S, Lauenstein J, Ferlet-Cavrois V, Marec R, Hernandez F, Scheick L, Bezerra F, Muschitiello M, Poivey C, Sukhaseum N, Coquelet L, Cao H, Carrier D, Brisebois M, Mangeret R, Ecoffet R, LaBel K, Zafrani M, Sherman P. EFFECTS OF ION SPECIES ON SEB FAILURE VOLTAGE OF POWER DMOSFET. IEEE Trans. Nucl. Sci. 2011;58 (6):2991-2997.
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  16. Chen D, Pease R, Kruckmeyer K, Forney J, Phan A, Carts M, Cox S, Burns S, Albarian R, Holcombe B, Little B, Salzman J, Chaumont G, Duperray H, Ouellet A, Buchner S, LaBel K. ENHANCED LOW DOSE RATE SENSITIVITY AT ULTRA-LOW DOSE RATES. Nuclear Science, IEEE Transactions on. 2011;PP (99):
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  17. O\'Bryan M, LaBel K, Pellish J, Lauenstein J, Chen D, Marshall C, Oldham T, Kim H, Phan A, Berg M, Campola M, Sanders A, Marshall P, Xapsos M, Heidel D, Rodbell K, Swonger J, Alexander D, Gauthier M, Gauthier B. RECENT SINGLE EVENT EFFECTS COMPENDIUM OF CANDIDATE ELECTRONICS FOR NASA SPACE SYSTEMS. In: Radiation Effects Data Workshop (REDW), 2011 IEEE. Radiation Effects Data Workshop (REDW), 2011 IEEE; JULY 2011; 2011. p. 1-13.
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  18. Berg M, Kim H, Friendlich M, Perez C, Seidleck C, LaBel K, Ladbury R. SEU ANALYSIS OF COMPLEX CIRCUITS IMPLEMENTED IN ACTEL RTAX-S FPGA DEVICES. Nuclear Science, IEEE Transactions on. 2011;PP (99):
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  19. Horst S, Phillips S, Cressler J, Kruckmeyer K, Eddy R, Aude A, O'Farrell P, Zhang B, Wilcox E, LaBel K. STUDY OF TOTAL DOSE MITIGATION APPROACHES FOR CHARGE PUMPS IN PHASE-LOCKED LOOP APPLICATIONS. IEEE Trans. Nucl. Sci. 2011;58 (6):3038-3045.
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  20. Seifert N, Gill B, Pellish J, Marshall P, LaBel K. SUSCEPTIBILITY OF 45 AND 32 NM BULK CMOS LATCHES TO LOW-ENERGY PROTONS. IEEE Trans. Nucl. Sci. 2011;58 (6):2711-2718.
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